A CAD oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S parameters measurements

Delphine Sirieix (1) , Olivier Noblanc , Denis Barataud (1) , Eric Chartier (2)

1 IRCOM - Institut de Recherche en Communications Optiques et Microondes
2 III-V Lab - Alcatel-Thalès III-V lab

Mots clés: S-parameters characteristics measurement circuit CAD microwave field effect transistors microwave measurement microwave power transistors power MESFET semiconductor device measurement semiconductor device models

Domaines: Electronique; Micro et nanotechnologies/Microélectronique

Delphine Sirieix, Olivier Noblanc, Denis Barataud, Eric Chartier. A CAD oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S parameters measurements. IEEE Transactions on Electron Devices, 1999, 46 (3), pp.580-584. ⟨10.1109/16.748881⟩. ⟨hal-01287611⟩