On-wafer Time-Domain and Low-Frequency Measurements of GaN HEMTs for Accurate Trap Modeling and its Impact on Pulse-to-Pulse Stability

Seifeddine Fakhfakh; Audrey Martin; Michel Campovecchio; Guillaume Neveux; Denis Barataud

On-wafer Time-Domain and Low-Frequency Measurements of GaN HEMTs for Accurate Trap Modeling and its Impact on Pulse-to-Pulse Stability

Seifeddine Fakhfakh ¹ Audrey Martin ¹ Michel Campovecchio ^{1, *} Guillaume Neveux ¹ Denis Barataud ¹

* Auteur correspondant

XLIM - XLIM : SRF

Abstract : This paper reports on new techniques of on-wafer time-domain measurements applied to irregular bursts of RF pulses in order to enhance the nonlinear electro-thermal modeling of traps in GaN HEMTs. At first, advanced modeling techniques of traps are illustrated by specific pulsed I-V and low-frequency Y 22 measurements performed on a 10 W GaN HEMT at different temperatures. Finally, although we had initially developed the on-wafer time-domain measurement of low-frequency drain currents and pulse-to-pulse (P2P) stabilities for radar applications, such a measurement setup shows a great potential to improve the nonlinear electro-thermal modeling of traps.

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01871082
Contributeur : Michel Campovecchio <>
Soumis le : lundi 10 septembre 2018 - 12:24:42
Dernière modification le : lundi 24 septembre 2018 - 09:18:39

On-wafer Time-Domain and Low-Frequency Measurements of GaN HEMTs for Accurate Trap Modeling and its Impact on Pulse-to-Pulse Stability

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On-wafer Time-Domain and Low-Frequency Measurements of GaN HEMTs for Accurate Trap Modeling and its Impact on Pulse-to-Pulse Stability

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