On-wafer Time-Domain and Low-Frequency Measurements of GaN HEMTs for Accurate Trap Modeling and its Impact on Pulse-to-Pulse Stability

Abstract : This paper reports on new techniques of on-wafer time-domain measurements applied to irregular bursts of RF pulses in order to enhance the nonlinear electro-thermal modeling of traps in GaN HEMTs. At first, advanced modeling techniques of traps are illustrated by specific pulsed I-V and low-frequency Y 22 measurements performed on a 10 W GaN HEMT at different temperatures. Finally, although we had initially developed the on-wafer time-domain measurement of low-frequency drain currents and pulse-to-pulse (P2P) stabilities for radar applications, such a measurement setup shows a great potential to improve the nonlinear electro-thermal modeling of traps.
Type de document :
Communication dans un congrès
Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01871082
Contributeur : Michel Campovecchio <>
Soumis le : lundi 10 septembre 2018 - 12:24:42
Dernière modification le : lundi 24 septembre 2018 - 09:18:39

Identifiants

Collections

Citation

Seifeddine Fakhfakh, Audrey Martin, Michel Campovecchio, Guillaume Neveux, Denis Barataud. On-wafer Time-Domain and Low-Frequency Measurements of GaN HEMTs for Accurate Trap Modeling and its Impact on Pulse-to-Pulse Stability. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC), Jul 2018, Brive, France. ⟨10.1109/INMMIC.2018.8430028⟩. ⟨hal-01871082⟩

Partager

Métriques

Consultations de la notice

32