A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors

Abstract : A pulsed I(V) and S-parameters setup for the RF modeling of semi-conductor devices is described. The management of the whole setup as well as the database is made by an object-oriented software, which provides a large amount of modularity and reusability of the different tools developed. Measurements capability on power devices is demonstrated as well as the S-parameters measurements capabilities in critical regions of FET devices. I(V) and RF measures are presented. These measurements provide a nonlinear small-signal equivalent circuit function of the command voltages.
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https://hal-unilim.archives-ouvertes.fr/hal-01067054
Contributeur : Michel Campovecchio <>
Soumis le : lundi 22 septembre 2014 - 18:11:19
Dernière modification le : dimanche 1 décembre 2019 - 16:54:01

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Jean-Pierre Teyssier, Michel Campovecchio, Raphaël Sommet, Portilla Joaquin, Raymond Quéré. A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors. 23rd European Microwave Conference, Sep 1993, Madrid, Spain. pp. 489-493, ⟨10.1109/EUMA.1993.336603⟩. ⟨hal-01067054⟩

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