A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors

Jean-Pierre Teyssier; Michel Campovecchio; Raphaël Sommet; Portilla Joaquin; Raymond Quéré

A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors

Jean-Pierre Teyssier ¹ Michel Campovecchio ^{1, *} Raphaël Sommet ¹ Portilla Joaquin ¹ Raymond Quéré ¹

* Auteur correspondant

1 IRCOM - Institut de Recherche en Communications Optiques et Microondes

Abstract : A pulsed I(V) and S-parameters setup for the RF modeling of semi-conductor devices is described. The management of the whole setup as well as the database is made by an object-oriented software, which provides a large amount of modularity and reusability of the different tools developed. Measurements capability on power devices is demonstrated as well as the S-parameters measurements capabilities in critical regions of FET devices. I(V) and RF measures are presented. These measurements provide a nonlinear small-signal equivalent circuit function of the command voltages.

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01067054
Contributeur : Michel Campovecchio <>
Soumis le : lundi 22 septembre 2014 - 18:11:19
Dernière modification le : dimanche 1 décembre 2019 - 16:54:01

A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors

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A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors

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