A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors

Jean-Pierre Teyssier (1) , Michel Campovecchio (1) , Raphaël Sommet (1) , Portilla Joaquin (1) , Raymond Quéré (1)

1 IRCOM - Institut de Recherche en Communications Optiques et Microondes

A pulsed I(V) and S-parameters setup for the RF modeling of semi-conductor devices is described. The management of the whole setup as well as the database is made by an object-oriented software, which provides a large amount of modularity and reusability of the different tools developed. Measurements capability on power devices is demonstrated as well as the S-parameters measurements capabilities in critical regions of FET devices. I(V) and RF measures are presented. These measurements provide a nonlinear small-signal equivalent circuit function of the command voltages.

Domaines: Sciences de l'ingénieur [physics]; Electronique

Jean-Pierre Teyssier, Michel Campovecchio, Raphaël Sommet, Portilla Joaquin, Raymond Quéré. A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors. 23rd European Microwave Conference, Sep 1993, Madrid, Spain. pp. 489-493, ⟨10.1109/EUMA.1993.336603⟩. ⟨hal-01067054⟩