Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements

Agostino Benvegnu , D Bisi , Sylvain Laurent (1) , M Meneghini (2) , G Meneghesso , Jean-Luc Muraro (3) , Denis Barataud (1) , Enrico Zanoni , Raymond Quéré (1)

1 XLIM-SRF - Systèmes RF
2 DEI - Department of Information Engineering [Padova]
3 TAS - Thales Alenia Space [Toulouse]

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, Drain Current Transient (DCT) measurements and Low Frequency output-admittance (LF Y22) dispersion measurements. DCT characterization is carried out over a 7-decade time scale. LF Y22 measurements are carried out over the frequency range from 10 Hz to 10 MHz. These combined measurements were performed for AlGaN/GaN HEMTs under class AB operation and allowed the extraction of the activation energy Ea and the capture cross section σa of the identified traps. Low-frequency small-signal, (LF Y22) and large-signal voltage steps (DCT) results for trap characterization were found to be correlated. They allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

Mots clés: III-V semiconductors aluminium compounds gallium compounds high electron mobility transistors wide band gap semiconductors

Domaines: Electronique; Micro et nanotechnologies/Microélectronique

Agostino Benvegnu, D Bisi, Sylvain Laurent, M Meneghini, G Meneghesso, et al.. Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements. Microwave Integrated Circuits Conference (EuMIC), 2015 10th European , Sep 2015, PARIS, France. pp.136-139, ⟨10.1109/EuMIC.2015.7345087⟩. ⟨hal-01286563⟩