Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

Keywords : III-V semiconductors S-parameters aluminium compounds gallium compounds high electron mobility transistors silicon compounds technology CAD (electronics) 2D physics-based numerical simulation AlN-GaN-AlGaN DC measurement HEMT SiC TCAD-based device simulation channel sheet resistance chuck temperature gate-source bias high-electron mobility transistors low-frequency S-parameter measurement on-wafer measurement parasitic resistance characterization silicon carbide substrate source-drain lengths temperature-dependent on-resistance temperature-dependent series contact resistance two-dimensional physics-based numerical simulation Aluminum gallium nitride Gallium nitride HEMTs MODFETs Semiconductor device measurement Temperature measurement Wide band gap semiconductors Gallium-nitride (GaN) high electron-mobility transistor (HEMT) numerical simulation on-resistance sheet resistance sheet resistance.