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Article dans une revue
Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements
Abstract : no abstract
Keywords :
III-V semiconductors
S-parameters
aluminium compounds
gallium compounds
high electron mobility transistors
silicon compounds
technology CAD (electronics)
2D physics-based numerical simulation
AlN-GaN-AlGaN
DC measurement
HEMT
SiC
TCAD-based device simulation
channel sheet resistance
chuck temperature
gate-source bias
high-electron mobility transistors
low-frequency S-parameter measurement
on-wafer measurement
parasitic resistance characterization
silicon carbide substrate
source-drain lengths
temperature-dependent on-resistance
temperature-dependent series contact resistance
two-dimensional physics-based numerical simulation
Aluminum gallium nitride
Gallium nitride
HEMTs
MODFETs
Semiconductor device measurement
Temperature measurement
Wide band gap semiconductors
Gallium-nitride (GaN)
high electron-mobility transistor (HEMT)
numerical simulation
on-resistance
sheet resistance
sheet resistance.
https://hal-unilim.archives-ouvertes.fr/hal-01394908
Contributeur : Raphael Sommet Connectez-vous pour contacter le contributeur
Soumis le : jeudi 10 novembre 2016 - 10:27:04
Dernière modification le : mercredi 22 décembre 2021 - 11:58:09
Contributeur : Raphael Sommet Connectez-vous pour contacter le contributeur
Soumis le : jeudi 10 novembre 2016 - 10:27:04
Dernière modification le : mercredi 22 décembre 2021 - 11:58:09
