Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

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IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2016, 64 (5), pp.1351-1358. 〈10.1109/TMTT.2016.2549528〉
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Soumis le : jeudi 10 novembre 2016 - 10:27:04
Dernière modification le : jeudi 18 octobre 2018 - 01:18:09

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N. K. Subramani, A. K. Sahoo, Jean-Christophe Nallatamby, R. Sommet, N. Rolland, et al.. Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements. IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2016, 64 (5), pp.1351-1358. 〈10.1109/TMTT.2016.2549528〉. 〈hal-01394908〉

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