Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

N. K. Subramani; A. K. Sahoo; Jean-Christophe Nallatamby; R. Sommet; N. Rolland; F. Medjdoub; R. Quere

doi:10.1109/TMTT.2016.2549528

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

N. K. Subramani ¹ A. K. Sahoo ¹ Jean-Christophe Nallatamby ¹ R. Sommet ¹ N. Rolland ² F. Medjdoub ² R. Quere ¹

1 XLIM-SRF - Systèmes RF

XLIM - XLIM : SRF

2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Abstract : no abstract

Keywords : III-V semiconductors S-parameters aluminium compounds gallium compounds high electron mobility transistors silicon compounds technology CAD (electronics) 2D physics-based numerical simulation AlN-GaN-AlGaN DC measurement HEMT SiC TCAD-based device simulation channel sheet resistance chuck temperature gate-source bias high-electron mobility transistors low-frequency S-parameter measurement on-wafer measurement parasitic resistance characterization silicon carbide substrate source-drain lengths temperature-dependent on-resistance temperature-dependent series contact resistance two-dimensional physics-based numerical simulation Aluminum gallium nitride Gallium nitride HEMTs MODFETs Semiconductor device measurement Temperature measurement Wide band gap semiconductors Gallium-nitride (GaN) high electron-mobility transistor (HEMT) numerical simulation on-resistance sheet resistance sheet resistance.

Type de document :

Article dans une revue

IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2016, 64 (5), pp.1351-1358. 〈10.1109/TMTT.2016.2549528〉

Domaine :

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01394908
Contributeur : Raphael Sommet <>
Soumis le : jeudi 10 novembre 2016 - 10:27:04
Dernière modification le : jeudi 18 octobre 2018 - 01:18:09

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

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Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

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